Calculate the small-signal model parameters g_m, r_o, C_gs, and C_gdfor a NMOS transistor. Assume the transistor operates in the active region with I_D= 100 μA, V_DS= 1V, V_BS= 0 V, W 0.9 μm, and L = 0.2 μm. Use the transistor model data in Table 2.5.

Table 2.5

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Value Value n-Channel p-Channel Parameter Symbol Transistor Transistor Units 8 x 1016 8 x 1016 Atoms/cm? Substrate doping Gate oxide thickness NA, Np 42 42 Angstroms tox Metal-silicon work function -0.6 Фия -0.1 Channel mobility Minimum drawn channel length Source, drain junction depth Source, drain side diffusion Overlap capacitance per unit gate width cm?/V-s 300 80 Laewn X j 0.2 0.2 μη 0.16 0.16 um 0.015 0.33 0.01 0.36 La um Cod fF/um Threshold adjust implant (box dist.) impurity type effective depth P P 0.12 0.12 х, Atoms/cm3 effective surface Ni 2 x 1017 2 x 1017 concentration -0.45 1020 Nominal threshold voltage Polysilicon gate doping V, Napoly 0.5 Atoms/cm 1020 concentration Poly gate sheet resistance Source, drain-bulk junction capacitances (zero bias) Source, drain-bulk junction capacitance grading coefficient Source, drain periphery capacitance (zero bias) Source, drain periphery capacitance grading coefficient Source, drain junction built-in potential R, fF/um? Cp 1.0 1.1 0.45 0.36 п 0.25 fF/um С умо 0.2 0.2 0.24 п 0.68 0.74 Qss Surface-state density Atoms/cm? 10!" 10! dх Channel-length modulation 0.028 0.023 um/V dVDs parameter