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Consider a step pn junction made of GaAs at T= 300 K. At zero bias, only 20% of the total depletion region width is
Consider a step pn junction made of GaAs at T= 300 K. At zero bias, only 20% of the total depletion region width is in the p-side. The built-in potential o; = 1.20 V. Determine the acceptor density in the p-side in unit of cm-3. Answers within 5% error will be considered correct.
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Thermodynamics An Engineering Approach
Authors: Yunus A. Cengel, Michael A. Boles
8th edition
73398179, 978-0073398174
