Answered step by step
Verified Expert Solution
Question
1 Approved Answer
In semiconductor process Silicon Stagnant gas layer CC. Ci J, J2 - Gas Oxide Schematic diagram of the oxidant flows during oxidation g Q: In
In semiconductor process Silicon Stagnant gas layer CC. Ci J, J2 - Gas Oxide Schematic diagram of the oxidant flows during oxidation g Q: In this case, how to prove this conclusion C; . ks ks tox 1+ h + Do, + Utilize this hint n V C, -C, J, - Do, = h,(C, -Cs): Mass transfer of oxidant to surface of oxide tsi ts: thickness of stagnant layer P. g C k h : mass transport coeff C. - C J2 = D., mass transfer of oxidant through the oxide tox Jz = ks C, (19 order rxn) : reaction rate at Si/SiO2 Henry's law: C. HP = HTC H: Henry's gas constant At equil. J, = J= J, DO h (Co-C)=0 (C. -C)=k, C; tor : = = S ,-c..kC
Step by Step Solution
There are 3 Steps involved in it
Step: 1
Get Instant Access to Expert-Tailored Solutions
See step-by-step solutions with expert insights and AI powered tools for academic success
Step: 2
Step: 3
Ace Your Homework with AI
Get the answers you need in no time with our AI-driven, step-by-step assistance
Get Started