In semiconductor process Silicon Stagnant gas layer CC. Ci J, J2 - Gas Oxide Schematic diagram of the oxidant flows during oxidation g Q: In this case, how to prove this conclusion C; . ks ks tox 1+ h + Do, + Utilize this hint n V C, -C, J, - Do, = h,(C, -Cs): Mass transfer of oxidant to surface of oxide tsi ts: thickness of stagnant layer P. g C k h : mass transport coeff C. - C J2 = D., mass transfer of oxidant through the oxide tox Jz = ks C, (19 order rxn) : reaction rate at Si/SiO2 Henry's law: C. HP = HTC H: Henry's gas constant At equil. J, = J= J, DO h (Co-C)=0 (C. -C)=k, C; tor : = = S ,-c..kC