The following formulas and constants may be useful: e(Ei-Ep)/kT; n=ne(F)/kT; p=ne(Ei-Fp T; po=nie Sn = Sp = gop*t; no* po = n p)/kT kT=26meV at 300K; ni -1.5x100 cm 1. How would you increase the hole concentration in a P-type and N-type semiconductor? (10%) 2. Does mobility have any meaning at very high electric field? (10%) 3. What is carrier lifetime? (10%) 4. What is your understanding of the Fermi level? (10%)