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computer science
systems analysis and design 12th

Questions and Answers of Systems Analysis And Design 12th

Fill in the missing parameter values in the following table for a MOSFET. Let \(K_{n}=1.5 \mathrm{~mA} / \mathrm{V}^{2}\). ID (A) fr (GHz) Cgs(fF) Cgd (FF) 50 60 10 300 60 10 3 60 10 250 2.5 8
(a) An n-channel MOSFET has an electron mobility of \(450 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}\) and a channel length of \(1.2 \mu \mathrm{m}\). Let \(V_{G S}-V_{T N}=0.5 \mathrm{~V}\). Determine
A common-source equivalent circuit is shown in Figure P7.59. The transistor transconductance is \(g_{m}=3 \mathrm{~mA} / \mathrm{V}\). (a) Calculate the equivalent Miller capacitance. (b) Determine
Starting with the definition of unity-gain frequency, as given by Equation (7.97), neglect the overlap capacitance, assume \(C_{g d} \cong 0\) and \(C_{g s} \cong\) \(\left(\frac{2}{3}\right) W L
The parameters of an ideal n-channel MOSFET are \(W / L=8\), \(\mu_{n}=400 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}, C_{\mathrm{ox}}=6.9 \times 10^{-7} \mathrm{~F} / \mathrm{cm}^{2}\), and \(V_{T
Figure P7.62 shows the high-frequency equivalent circuit of an FET, including a source resistance \(r_{s}\). (a) Derive an expression for the lowfrequency current gain \(A_{i}=I_{o} / I_{i}\). (b)
For the FET circuit in Figure P7.63, the transistor parameters are: \(K_{n}=\) \(1 \mathrm{~mA} / \mathrm{V}^{2}, V_{T N}=2 \mathrm{~V}, \lambda=0, C_{g s}=50 \mathrm{fF}\), and \(C_{g d}=8
The midband voltage gain of a common-source MOSFET amplifier is \(A_{v}=-15 \mathrm{~V} / \mathrm{V}\). The capacitances of the transistor are \(C_{g s}=0.2 \mathrm{pF}\) and \(C_{g d}=0.04
In the circuit in Figure P7.65, the transistor parameters are: \(\beta=120\), \(V_{B E}(\) on \()=0.7 \mathrm{~V}, V_{A}=100 \mathrm{~V}, C_{\mu}=1 \mathrm{pF}\), and \(f_{T}=600 \mathrm{MHz}\). (a)
In the circuit in Figure P7.66, the transistor parameters are: \(\beta=120\), \(V_{B E}(\mathrm{on})=0.7 \mathrm{~V}, V_{A}=\infty, C_{\mu}=3 \mathrm{pF}\), and \(f_{T}=250 \mathrm{MHz}\). Assume the
The parameters of the transistor in the common-source circuit in Figure P7.67 are: \(K_{p}=2 \mathrm{~mA} / \mathrm{V}^{2}, V_{T P}=-2 \mathrm{~V}, \lambda=0.01 \mathrm{~V}^{-1}, C_{g s}=10
The bias voltages of the circuit shown in Figure P7.67 are changed to \(V^{+}=3 \mathrm{~V}\) and \(V^{-}=-3 \mathrm{~V}\). The input resistances are \(R_{i}=4 \mathrm{k} \Omega\) and \(R_{G}=200
For the PMOS common-source circuit shown in Figure P7.69, the transistor parameters are: \(V_{T P}=-2 \mathrm{~V}, K_{p}=1 \mathrm{~mA} / \mathrm{V}^{2}, \lambda=0, C_{g s}=15 \mathrm{pF}\), and
In the common-base circuit shown in Figure P7.70, the transistor parameters are: \(\beta=100, V_{B E}(\) on \()=0.7 \mathrm{~V}, V_{A}=\infty, C_{\pi}=10 \mathrm{pF}\), and \(C_{\mu}=1 \mathrm{pF}\).
Repeat Problem 7.70 for the common-base circuit in Figure P7.71. Assume \(V_{E B}(\) on \()=0.7\) for the pnp transistor. The remaining transistor parameters are the same as given in Problem
In the common-gate circuit in Figure P7.72, the transistor parameters are: \(V_{T N}=1 \mathrm{~V}, K_{n}=3 \mathrm{~mA} / \mathrm{V}^{2}, \lambda=0, C_{g s}=15 \mathrm{pF}\), and \(C_{g d}=4
Consider the common-gate circuit in Figure P7.73 with parameters \(V^{+}=\) \(5 \mathrm{~V}, V^{-}=-5 \mathrm{~V}, R_{S}=4 \mathrm{k} \Omega, R_{D}=2 \mathrm{k} \Omega, R_{L}=4 \mathrm{k} \Omega,
For the cascode circuit in Figure 7.65 in the text, circuit parameters are the same as described in Example 7.15. The transistor parameters are: \(\beta_{o}=120, V_{A}=\infty, V_{B
An emitter-follower amplifier is shown in Figure P7.75. Using a computer simulation, determine the upper \(3 \mathrm{~dB}\) frequency and the midband voltage gain for: (a) \(R_{L}=0.2 \mathrm{k}
The transistor circuit in Figure P7.76 is a Darlington pair configuration. Using a computer simulation, determine the upper \(3 \mathrm{~dB}\) frequency and the midband voltage gain for (a) \(R_{E
Consider the common-source amplifier in Figure P7.77 (a) and the cascode amplifier in Figure P7.77(b). Using standard transistors, determine the upper \(3 \mathrm{~dB}\) frequency and the midband
Consider identical transistors in the circuit in Figure P7.78. Assume the two coupling capacitors are both equal to \(C_{C}=4.7 \mu \mathrm{F}\). Using a computer simulation, determine the lower and
(a) Design a common-emitter amplifier using a 2N2222A transistor biased at \(I_{C Q}=1 \mathrm{~mA}\) and \(V_{C E Q}=10 \mathrm{~V}\). The available power supplies are \(\pm 15 \mathrm{~V}\), the
Design a bipolar amplifier with a midband gain of \(\left|A_{v}\right|=50\) and a lower \(3 \mathrm{~dB}\) frequency of \(10 \mathrm{~Hz}\). The available transistors are \(2 \mathrm{~N} 2222
A common-emitter amplifier is designed to provide a particular midband gain and a particular bandwidth, using device A from Table P7.81. Assume \(I_{C Q}=1 \mathrm{~mA}\). Investigate the effect on
A simplified high-frequency equivalent circuit of a common-emitter amplifier is shown in Figure P7.82. The input signal is coupled into the amplifier through \(C_{C 1}\), the output signal is coupled
Describe the basic structure and operation of npn and pnp bipolar transistors.
What are the bias voltages that need to be applied to an npn bipolar transistor such that the transistor is biased in the forward-active mode?
Define the conditions for cutoff, forward-active mode, and saturation mode for a pnp bipolar transistor.
Define common-base current gain and common-emitter current gain.
Discuss the difference between the ac and dc common-emitter current gains.
State the relationships between collector, emitter, and base currents in a bipolar transistor biased in the forward-active mode.
Define Early voltage and collector output resistance.
Describe a simple common-emitter circuit with an npn bipolar transistor and discuss the relation between collector-emitter voltage and input base current.
Describe the parameters that define a load line. Define \(Q\)-point.
What are the steps used to analyze the dc response of a bipolar transistor circuit?
Describe how an npn transistor can be used to switch an LED diode on and off.
Describe a bipolar transistor NOR logic circuit.
Describe how a transistor can be used to amplify a time-varying voltage.
Discuss the advantages of using resistor voltage divider biasing compared to a single base resistor.
What is the principal difference between biasing techniques used in discrete transistor circuits and integrated circuits?
(a) In a bipolar transistor biased in the forward-active region, the base current is \(i_{B}=2.8 \mu \mathrm{A}\) and the emitter current is \(i_{E}=325 \mu \mathrm{A}\). Determine \(\beta\),
(a) A bipolar transistor is biased in the forward-active mode. The collector current is \(i_{C}=726 \mu \mathrm{A}\) and the emitter current is \(i_{E}=732 \mu \mathrm{A}\). Determine \(\beta,
(a) The range of \(\beta\) for a particular type of transistor is \(110 \leq \beta \leq 180\). Determine the corresponding range of \(\alpha\). (b) If the base current is \(50 \mu \mathrm{A}\),
(a) A bipolar transistor is biased in the forward-active mode. The measured parameters are \(i_{E}=1.25 \mathrm{~mA}\) and \(\beta=150\). Determine \(i_{B}, i_{C}\), and \(\alpha\).(b) Repeat part
(a) For the following values of common-base current gain \(\alpha\), determine the corresponding common-emitter current gain \(\beta\) :(b) For the following values of common-emitter current gain
An npn transistor with \(\beta=80\) is connected in a common-base configuration as shown in Figure P5.6.(a) The emitter is driven by a constant-current source with \(I_{E}=1.2 \mathrm{~mA}\).
The emitter current in the circuit in Figure P5.6 is \(I_{E}=0.80 \mathrm{~mA}\). The transistor parameters are \(\alpha=0.9910\) and \(I_{E O}=5 \times 10^{-14} \mathrm{~A}\). Determine \(I_{B}\),
A pnp transistor with \(\beta=60\) is connected in a common-base configuration as shown in Figure P5.8.(a) The emitter is driven by a constant-current source with \(I_{E}=0.75 \mathrm{~mA}\).
(a) The pnp transistor shown in Figure P5.8 has a common-base current gain \(\alpha=0.9860\). Determine the emitter current such that \(V_{C}=-1.2 \mathrm{~V}\). What is the base current?(b) Using
An npn transistor has a reverse-saturation current of \(I_{S}=5 \times 10^{-15} \mathrm{~A}\) and a current gain of \(\beta=125\). The transistor is biased at \(v_{B E}=0.615 \mathrm{~V}\). Determine
Two pnp transistors, fabricated with the same technology, have different junction areas. Both transistors are biased with an emitter-base voltage of \(v_{E B}=0.650 \mathrm{~V}\) and have emitter
The collector currents in two transistors, \(A\) and \(B\), are both \(i_{C}=275 \mu \mathrm{A}\). For transistor \(A, I_{S A}=8 \times 10^{-16} \mathrm{~A}\). The base-emitter area of transistor
A BJT has an Early voltage of \(80 \mathrm{~V}\). The collector current is \(I_{C}=0.60 \mathrm{~mA}\) at a collector-emitter voltage of \(V_{C E}=2 \mathrm{~V}\). (a) Determine the collector current
The open-emitter breakdown voltage of a \(\mathrm{B}-\mathrm{C}\) junction is \(B V_{C B O}=60 \mathrm{~V}\). If \(\beta=100\) and the empirical constant is \(n=3\), determine the C-E breakdown
In a particular circuit application, the minimum required breakdown voltages are \(B V_{C B O}=220 \mathrm{~V}\) and \(B V_{C E O}=56 \mathrm{~V}\). If \(n=3\), determine the maximum allowed value of
A particular transistor circuit design requires a minimum open-base breakdown voltage of \(B V_{\text {CEO }}=50 \mathrm{~V}\). If \(\beta=50\) and \(n=3\), determine the minimum required value of
For all the transistors in Figure P5.17, \(\beta=75\). The results of some measurements are indicated on the figures. Find the values of the other labeled currents, voltages, and/or resistor values.
The emitter resistor values in the circuits show in Figures P5.17(a) and (c) may vary by \(\pm 5\) percent from the given value. Determine the range of calculated parameters. +10 V www RC + VB VCE=4
Consider the two circuits in Figure P5.19. The parameters of each transistor are \(I_{S}=5 \times 10^{-16} \mathrm{~A}\) and \(\beta=90\). Determine \(V_{B B}\) in each circuit such that \(V_{C
The current gain for each transistor in the circuits shown in Figure P5.20 is \(\beta=120\). For each circuit, determine \(I_{C}\) and \(V_{C E}\). VBB= 0.2 V Figure P5.20 VCE Rc= 4 (a) VBB= 1.4 V
Consider the circuits in Figure P5.21. For each transistor, \(\beta=120\). Determine \(I_{C}\) and \(V_{E C}\) for each circuit. VBB= 0.2 V VEC VBB= 2 V www RE= 1.5 18= V+= 15 A 2 V www Figure P5.21
(a) The circuit and transistor parameters for the circuit shown in Figure 5.20(a) are \(V_{C C}=3 \mathrm{~V}, V_{B B}=1.3 \mathrm{~V}\), and \(\beta=100\). Redesign the circuit such that \(I_{B Q}=5
In the circuits shown in Figure P5.23, the values of measured parameters are shown. Determine \(\beta, \alpha\), and the other labeled currents and voltages. Sketch the dc load line and plot the
(a) For the circuit in Figure P5.24, determine \(V_{B}\) and \(I_{E}\) such that \(V_{B}=V_{C}\). Assume \(\beta=90\). (b) What value of \(V_{B}\) results in \(V_{C E}=2 \mathrm{~V}\) ? VB +5 V -5 V
(a) The bias voltages in the circuit shown in Figure P5.25 are changed to \(V^{+}=3.3 \mathrm{~V}\) and \(V^{-}=-3.3 \mathrm{~V}\). The measured value of emitter voltage is \(V_{E}=0.85
The transistor shown in Figure P5.26 has \(\beta=120\). Determine \(I_{C}\) and \(V_{E C}\). Plot the load line and the \(Q\)-point. V = +5 V RB = 250 k + VEC Rc 1.5 ks2 Figure P5.26 V-=-5 V
The transistor in the circuit shown in Figure P5.27 is biased with a constant current in the emitter. If \(I_{Q}=1 \mathrm{~mA}\), determine \(V_{C}\) and \(V_{E}\). Assume \(\beta=50\). +9 V -OVE RB
In the circuit in Figure P5.27, the constant current is \(I=0.5 \mathrm{~mA}\). If \(\beta=50\), determine the power dissipated in the transistor. Does the constant current source supply or dissipate
For the circuit shown in Figure P5.29, if \(\beta=200\) for each transistor, determine: (a) \(I_{E 1}\), (b) \(I_{E 2}\), (c) \(V_{C 1}\), and (d) \(V_{C 2}\). +5 V RC = 4 ks Rc2=4 ks2 -o VCL Vc2 Q2
The circuit shown in Figure P5.30 is to be designed such that \(I_{C Q}=0.8 \mathrm{~mA}\) and \(V_{C E Q}=2 \mathrm{~V}\) for the case when (a) \(R_{E}=0\) and (b) \(R_{E}=1 \mathrm{k} \Omega\).
(a) The bias voltage in the circuit in Figure P5.31 is changed to \(V_{C C}=9 \mathrm{~V}\). The transistor current gain is \(\beta=80\). Design the circuit such that \(I_{C Q}=0.25 \mathrm{~mA}\)
The current gain of the transistor in the circuit shown in Figure P5.32 is \(\beta=150\). Determine \(I_{C}, I_{E}\), and \(V_{C}\) for (a) \(V_{B}=0.2 \mathrm{~V}\), (b) \(V_{B}=0.9 \mathrm{~V}\),
(a) The current gain of the transistor in Figure P5.33 is \(\beta=75\). Determine \(V_{O}\) for: (i) \(V_{B B}=0\), (ii) \(V_{B B}=1 \mathrm{~V}\), and (iii) \(V_{B B}=2 \mathrm{~V}\).(b) Verify the
(a) The transistor shown in Figure \(\mathrm{P} 5.34\) has \(\beta=100\). Determine \(V_{O}\) for (i) \(I_{Q}=0.1 \mathrm{~mA}\), (ii) \(I_{Q}=0.5 \mathrm{~mA}\), and (iii) \(I_{Q}=2
Assume \(\beta=120\) for the transistor in the circuit shown in Figure P5.34. Determine \(I_{Q}\) such that (a) \(V_{O}=4 \mathrm{~V}\), (b) \(V_{O}=2 \mathrm{~V}\), and (c) \(V_{O}=0\). +5 V Rc=5kQ
For the circuit shown in Figure P5.27, calculate and plot the power dissipated in the transistor for \(I_{Q}=0,0.5,1.0,1.5,2.0,2.5\), and \(3.0 \mathrm{~mA}\). Assume \(\beta=50\). RE=4kQ ww + VEE=9V
Consider the common-base circuit shown in Figure P5.37. Assume the transistor alpha is \(\alpha=0.9920\). Determine \(I_{E}, I_{C}\), and \(V_{B C}\). RE=4kQ ww + VEE=9V + VBC Rc=2.2 kn Figure P5.37
(a) For the transistor in Figure P5.38, \(\beta=80\). Determine \(V_{1}\) such that \(V_{C E Q}=6 \mathrm{~V}\). (b) Determine the range in \(V_{1}\) that produces \(3 \leq V_{C E Q} \leq 9
Let \(\beta=25\) for the transistor in the circuit shown in Figure P5.39. Determine the range of \(V_{1}\) such that \(1.0 \leq V_{C E} \leq 4.5\mathrm{~V}\). Sketch the load line and show the range
(a) The circuit shown in Figure P5.40 is to be designed such that \(I_{C Q}=\) \(0.5 \mathrm{~mA}\) and \(V_{C E Q}=2.5 \mathrm{~V}\). Assume \(\beta=120\). Sketch the load line and plot the
The circuit shown in Figure P5.41 is sometimes used as a thermometer. Assume the transistors \(Q_{1}\) and \(Q_{2}\) in the circuit are identical. Writing the emitter currents in the form
The transistor in Figure P5.42 has \(\beta=120\).(a) Determine \(V_{I}\) that produces \(V_{O}=4 \mathrm{~V}\) for (i) \(R_{E}=0\) and (ii) \(R_{E}=1 \mathrm{k} \Omega\).(b) Repeat part (a) for
The common-emitter current gain of the transistor in Figure P5.43 is \(\beta=80\). Plot the voltage transfer characteristics over the range \(0 \leq V_{I} \leq 5 \mathrm{~V}\). RB = 180 k Vo ww
For the circuit shown in Figure P5.44, plot the voltage transfer characteristics over the range \(0 \leq V_{I} \leq 5 \mathrm{~V}\). Assume \(\beta=100\). RB = 180 k2 Figure P5.44 +5 V RE=1 kQ Vo
The transistor in the circuit shown in Figure P5.45 has a current gain of \(\beta=40\). Determine \(R_{B}\) such that \(V_{O}=0.2 \mathrm{~V}\) and \(I_{C} / I_{B}=20\) when \(V_{I}=5 \mathrm{~V}\).
Consider the circuit in Figure P5.46. For the transistor, \(\beta=50\). Find \(I_{B}, I_{C}\), \(I_{E}\), and \(V_{O}\) for (a) \(V_{I}=0\), (b) \(V_{I}=2.5 \mathrm{~V}\), and (c) \(V_{I}=5
The current gain for the transistor in the circuit in Figure P5.47 is \(\beta=60\). Determine \(R_{B}\) such that \(V_{O}=8.8 \mathrm{~V}\) when \(V_{I}=5 \mathrm{~V}\) and \(I_{C} / I_{B}=25\). RB
Consider the amplifier circuit shown in Figure P5.48. Assume a transistor current gain of \(\beta=120\). The voltage \(V_{B B}\) establishes the \(Q\)-point, and the voltage \(v_{i}\) is a
For the transistor in the circuit shown in Figure P5.49, assume \(\beta=120\). Design the circuit such that \(I_{C Q}=0.15 \mathrm{~mA}\) and \(R_{T H}=200 \mathrm{k} \Omega\). What is the value of
Reconsider Figure P5.49. The transistor current gain is \(\beta=150\). The circuit parameters are changed to \(R_{T H}=120 \mathrm{k} \Omega\) and \(R_{E}=1 \mathrm{k} \Omega\). Determine the values
The current gain of the transistor shown in the circuit of Figure P5.51 is \(\beta=100\). Determine \(V_{B}\) and \(I_{E Q}\). VB Vcc = +10 V TEQ RE = 1 k R = 20 k2 R = 15 kQ Figure P5.51
For the circuit shown in Figure P5.52, let \(\beta=125\). (a) Find \(I_{C Q}\) and \(V_{C E Q}\). Sketch the load line and plot the \(Q\)-point. (b) If the resistors \(R_{1}\) and \(R_{2}\) vary by
Consider the circuit shown in Figure P5.53. (a) Determine \(I_{B Q}, I_{C Q}\), and \(V_{C E Q}\) for \(\beta=80\). (b) What is the percent change in \(I_{C Q}\) and \(V_{C E Q}\) if \(\beta\) is
(a) Redesign the circuit shown in Figure P5.49 using \(V_{C C}=9 \mathrm{~V}\) such that the voltage drop across \(R_{C}\) is \(\left(\frac{1}{3}\right) V_{C C}\) and the voltage drop across
For the circuit shown in Figure P5.55, let \(\beta=100\). (a) Find \(R_{T H}\) and \(V_{T H}\) for the base circuit. (b) Determine \(I_{C Q}\) and \(V_{C E Q}\). (c) Draw the load line and plot the
Consider the circuit shown in Figure P5.56. (a) Determine \(R_{T H}, V_{T H}, I_{B Q}\), \(I_{C Q}\), and \(V_{E C Q}\) for \(\beta=90\). (b) Determine the percent change in \(I_{C Q}\) and \(V_{E C
(a) Determine the \(Q\)-point values for the circuit in Figure P5.57. Assume \(\beta=50\).(b) Repeat part (a) if all resistor values are reduced by a factor of 3 .(c) Sketch the load lines and plot
(a) Determine the \(Q\)-point values for the circuit in Figure P5.58. Assume \(\beta=50\).(b) Repeat part (a) if all resistor values are reduced by a factor of 3.(c) Sketch the load lines and plot
(a) For the circuit shown in Figure P5.59, design a bias-stable circuit such that \(I_{C Q}=0.8 \mathrm{~mA}\) and \(V_{C E Q}=5 \mathrm{~V}\). Let \(\beta=100\).(b) Using the results of part (a),

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