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computer science
systems analysis and design 12th

Questions and Answers of Systems Analysis And Design 12th

The parameters of the circuit in Figure P6.67 are \(V_{C C}=9 \mathrm{~V}, R_{L}=4 \mathrm{k} \Omega\), \(R_{C}=6 \mathrm{k} \Omega, R_{E}=3 \mathrm{k} \Omega, R_{1}=150 \mathrm{k} \Omega\), and
For the common-base circuit shown in Figure P6.67, let \(V_{C C}=5 \mathrm{~V}\), \(R_{L}=12 \mathrm{k} \Omega\), and \(R_{E}=500 \Omega\). The transistor parameters are \(\beta=100\) and
Consider the circuit shown in Figure P6.69. The transistor has parameters \(\beta=60\) and \(V_{A}=\infty\). (a) Determine the quiescent values of \(I_{C Q}\) and \(V_{C E Q}\). (b) Determine the
A photodiode in an optical transmission system, such as shown in Figure 1.40, can be modeled as a Norton equivalent circuit with \(i_{s}\) in parallel with \(R_{S}\) as shown in Figure P6.67. Assume
In the common-base circuit shown in Figure P6.71, the transistor is a \(2 \mathrm{~N} 2907 \mathrm{~A}\), with a nominal dc current gain of \(\beta=80\). (a) Determine \(I_{C Q}\) and \(V_{E C Q}\).
In the circuit of Figure P6.71, let \(V_{E E}=V_{C C}=5 \mathrm{~V}, \beta=100, V_{A}=\infty\), \(R_{L}=1 \mathrm{k} \Omega\), and \(R_{S}=0\). (a) Design the circuit such that the small-signal
Consider the ac equivalent circuit in Figure P6.73. The transistor parameters are \(\beta_{1}=120, \beta_{2}=80, V_{A 1}=V_{A 2}=\infty\), and \(I_{C Q 1}=I_{C Q 2}=1 \mathrm{~mA}\). (a) Find the
The transistor parameters in the ac equivalent circuit shown in Figure P6.74 are \(\beta_{1}=\beta_{2}=100, V_{A 1}=V_{A 2}=\infty, I_{C Q 1}=0.5 \mathrm{~mA}\), and \(I_{C Q 2}=2 \mathrm{~mA}\).(a)
The parameters for each transistor in the circuit shown in Figure P6.75 are \(\beta=100\) and \(V_{A}=\infty\). (a) Determine the small-signal parameters \(g_{m}, r_{\pi}\), and \(r_{o}\) for both
Consider the circuit shown in Figure P6.76 with transistor parameters \(\beta=120\) and \(V_{A}=\infty\). (a) Determine the small-signal parameters \(g_{m}, r_{\pi}\), and \(r_{o}\) for both
The transistor parameters for the circuit in Figure P6.77 are \(\beta_{1}=120\), \(\beta_{2}=80, V_{B E 1}\) (on) \(=V_{B E 2}\) (on) \(=0.7 \mathrm{~V}\), and \(V_{A 1}=V_{A 2}=\infty\). (a)
For each transistor in Figure P6.78, the parameters are \(\beta=100\) and \(V_{A}=\infty\). (a) Determine the \(Q\)-point values for both \(Q_{1}\) and \(Q_{2}\). (b) Determine the overall
An ac equivalent circuit of a Darlington pair configuration is shown in Figure P6.79. The transistor parameters are \(\beta_{1}=120, \beta_{2}=80, V_{A 1}=80 \mathrm{~V}\), and \(V_{A 2}=50
Consider the circuit in Figure 6.31. The circuit and transistor parameters are given in Exercise Ex 6.5.(a) Determine the average power dissipated in the transistor, \(R_{C}\), and \(R_{E}\) for
Consider the circuit shown in Figure 6.38. The transistor parameters are given in Exercise Ex 6.7. (a) Calculate the average power dissipated in the transistor, \(R_{C}\), and \(R_{E}\) for
For the circuit shown in Figure 6.43, use the circuit and transistor parameters described in Example 6.9. (a) Calculate the average power dissipated in the transistor, \(R_{E}\), and \(R_{C}\), for
For the circuit shown in Figure 6.57, the transistor parameters are \(\beta=100\) and \(V_{A}=100 \mathrm{~V}\), and the source resistor is \(R_{S}=0\). Determine the maximum undistorted signal power
Consider the circuit shown in Figure 6.64 with parameters given in Exercise TYU 6.14. (a) Calculate the average power dissipated in the transistor and \(R_{C}\), for \(v_{s}=0\). (b) Determine the
(a) Using a computer simulation, verify the results of Exercise Ex 6.5.(b) Repeat part (a) for Early voltages of (i) \(V_{A}=100 \mathrm{~V}\) and (ii) \(V_{A}=50 \mathrm{~V}\).Data From Exercise Ex
(a) Using a computer simulation, verify the results of Exercise TYU 6.7.s(b) Repeat part (a) for an Early voltage of \(V_{A}=50 \mathrm{~V}\).Data From Exercise TYU 6.7:- = TYU 6.7 For the circuit in
Using a computer simulation, verify the results of Example 6.10.Data From Example 6.10:- Determine the maximum symmetrical swing in the output voltage of the circuit given in Figure 6.43.
Using a computer simulation, verify the results of Exercise Ex 6.15 for the multi transistor amplifier.Data From Exercise Ex 6.15:- Ex 6.15: For each transistor in the circuit in Figure 6.69, the
Design a common-emitter amplifier with the general configuration shown in Figure 6.39 except with a pnp transistor. The magnitude of the small-signal voltage gain should be \(\left|A_{v}\right|=50\)
Consider the circuit in Figure 6.20. Let \(V_{C C}=5 \mathrm{~V}, R_{L}=10 \mathrm{k} \Omega, \beta=120\), and \(V_{A}=\infty\). Design the circuit such that the small-signal current gain is
A microphone puts out a peak voltage of \(2 \mathrm{mV}\) and has an output resistance of \(5 \mathrm{k} \Omega\). Design an amplifier system to drive a \(24 \Omega\) speaker, producing \(0.5
Redesign the two-stage amplifier in Figure 6.66 such that the voltage gain of each stage is \(A_{v 1}=A_{v 2}=-50\). Assume transistor current gains of \(\beta_{\text {npn }}=150\) and \(\beta_{\text
Describe the general frequency response of an amplifier and define the low frequency, midband, and high-frequency ranges.
Describe the general characteristics of the equivalent circuits that apply to the low-frequency, midband, and high-frequency ranges.
Describe what is meant by a system transfer function in the \(s\)-domain.
What is the criterion that defines a corner, or \(3 \mathrm{~dB}\), frequency?
Describe what is meant by the phase of the transfer function.
Describe the time constant technique for determining the corner frequencies.
Describe the general frequency response of a coupling capacitor, a bypass capacitor, and a load capacitor.
Sketch the expanded hybrid- \(\pi\) model of the BJT.
Describe the short-circuit current gain versus frequency response of a BJT and define the cutoff frequency.
Describe the Miller effect and the Miller capacitance.
What effect does the Miller capacitance have on the amplifier bandwidth?
Sketch the expanded small-signal equivalent circuit of a MOSFET.
Define the cutoff frequency for a MOSFET.
What is the major contribution to the Miller capacitance in a MOSFET?
Why is there not a Miller effect in a common-base circuit?
Describe the configuration of a cascode amplifier.
Why is the bandwidth of a cascode amplifier larger, in general, than that of a simple common-emitter amplifier?
Why is the bandwidth of the emitter-follower amplifier the largest of the three basic BJT amplifiers?
(a) Determine the voltage transfer function \(T(s)=V_{o}(s) / V_{i}(s)\) for the circuit shown in Figure P7.1. (b) Sketch the Bode magnitude plot and determine the corner frequency. (c) Determine the
Repeat Problem 7.1 for the circuit in Figure P7.2.Data From Problem 7.1:-(a) Determine the voltage transfer function \(T(s)=V_{o}(s) / V_{i}(s)\) for the circuit shown in Figure P7.1. (b) Sketch the
Consider the circuit in Figure P7.3. (a) Derive the expression for the voltage transfer function \(T(s)=V_{o}(s) / V_{i}(s)\). (b) What is the time constant associated with this circuit? (c) Find the
Consider the circuit in Figure P7.4 with a signal current source. The circuit parameters are \(R_{i}=30 \mathrm{k} \Omega, R_{P}=10 \mathrm{k} \Omega, C_{S}=10 \mu \mathrm{F}\), and \(C_{P}=50
Consider the circuit shown in Figure P7.5. (a) What is the value of the voltage transfer function \(V_{o} / V_{i}\) at very low frequencies? (b) Determine the voltage transfer function at very high
(a) Derive the voltage transfer function \(T(s)=V_{o}(s) / V_{i}(s)\) for the circuit shown in Figure 7.10, taking both capacitors into account.(b) Let \(R_{S}=R_{P}=10 \mathrm{k} \Omega, C_{S}=1 \mu
A voltage transfer function is given by \(T(f)=1 /\left(1+j f / f_{T}\right)^{3}\). (a) Show that the actual response at \(f=f_{T}\) is approximately \(9 \mathrm{~dB}\) below the maximum value. What
Sketch the Bode magnitude plots for the following functions:(a) \(T_{1}(s)=\frac{s}{s+100}\)(b) \(T_{2}(s)=\frac{5}{s / 2000+1}\)(c) \(T_{3}(s)=\frac{200(s+10)}{(s+1000)}\)
(a) (i) Sketch the Bode magnitude plot for the function\[T(s)=\frac{10(s+10)(s+100)}{(s+1)(s+1000)}\](ii) What are the corner frequencies?(iii) Determine \(|T(\omega)|\) for \(\omega \rightarrow
(a) Determine the transfer function corresponding to the Bode plot of the magnitude shown in Figure P7.10. (b) What is the actual gain at (i) \(\omega=50 \mathrm{rad} / \mathrm{s}\), (ii)
Consider the circuit shown in Figure 7.15 with parameters \(R_{S}=0.5 \mathrm{k} \Omega\), \(r_{\pi}=5.2 \mathrm{k} \Omega, g_{m}=29 \mathrm{~mA} / \mathrm{V}\), and \(R_{L}=6 \mathrm{k} \Omega\).
For the circuit shown in Figure P7.12, the parameters are \(R_{1}=10 \mathrm{k} \Omega\), \(R_{2}=10 \mathrm{k} \Omega, R_{3}=40 \mathrm{k} \Omega\), and \(C=10 \mu \mathrm{F}\). (a) What is the
The circuit shown in Figure 7.10 has parameters \(R_{S}=1 \mathrm{k} \Omega, R_{P}=10 \mathrm{k} \Omega\), and \(C_{S}=C_{P}=0.01 \mu \mathrm{F}\). Using PSpice, plot the magnitude and phase of the
The transistor shown in Figure P7.14 has parameters \(V_{T N}=0.4 \mathrm{~V}\), \(K_{n}=0.4 \mathrm{~mA} / \mathrm{V}^{2}\), and \(\lambda=0\). The transistor is biased at \(I_{D Q}=0.8
Consider the circuit shown in Figure P7.15. The transistor has parameters \(\beta=120\) and \(V_{A}=\infty\). The circuit bandwidth is \(800 \mathrm{MHz}\) and the quiescent collector-emitter voltage
The transistor in the circuit shown in Figure P7.16 has parameters \(V_{T N}=0.4 \mathrm{~V}, K_{n}=50 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda=0.01 \mathrm{~V}^{-1}\). (a) Derive the
For the common-emitter circuit in Figure P7.17, the transistor parameters are: \(\beta=100, V_{B E}(\) on \()=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). (a) Calculate the lower corner frequency. (b)
(a) Design the circuit shown in Figure P7.18 such that \(I_{D Q}=0.8 \mathrm{~mA}\), \(V_{D S Q}=3.2 \mathrm{~V}, R_{\text {in }}=160 \mathrm{k} \Omega\), and \(f_{L}=16 \mathrm{~Hz}\). The
The transistor in the circuit in Figure P7.19 has parameters \(K_{n}=\) \(0.5 \mathrm{~mA} / \mathrm{V}^{2}, V_{T N}=1 \mathrm{~V}\), and \(\lambda=0\).(a) Design the circuit such that \(I_{D Q}=\)
The transistor in the circuit in Figure P7.20 has parameters \(K_{p}=\) \(0.5 \mathrm{~mA} / \mathrm{V}^{2}, V_{T P}=-2 \mathrm{~V}\), and \(\lambda=0\). (a) Determine \(R_{o}\). (b) What is the
For the circuit in Figure P7.21, the transistor parameters are \(\beta=120\), \(V_{B E}(\) on \()=0.7 \mathrm{~V}\), and \(V_{A}=50 \mathrm{~V}\). (a) Design a bias-stable circuit such that \(I_{E
(a) For the circuit shown in Figure P7.22, write the voltage transfer function \(T(s)=V_{o}(s) / V_{i}(s)\). Assume \(\lambda>0\) for the transistor. (b) What is the expression for the time
Consider the circuit shown in Figure P7.23. (a) Write the transfer function \(T(s)=V_{o}(s) / V_{i}(s)\). Assume \(\lambda=0\) for the transistor. (b) Determine the expression for the time constant
The parameters of the transistor in the circuit in Figure P7.24 are \(V_{B E}(\) on \()=0.7 \mathrm{~V}, \beta=100\), and \(V_{A}=\infty\). (a) Determine the quiescent and small-signal parameters of
A capacitor is placed in parallel with \(R_{L}\) in the circuit in Figure P7.24. The capacitance is \(C_{L}=10 \mathrm{pF}\). The transistor parameters are the same as given in Problem 7.24. (a)
The parameters of the transistor in the circuit in Figure P7.26 are \(K_{p}=\) \(1 \mathrm{~mA} / \mathrm{V}^{2}, V_{T P}=-1.5 \mathrm{~V}\), and \(\lambda=0\). (a) Determine the quiescent and
A MOSFET amplifier with the configuration in Figure P7.27 is to be designed for use in a telephone circuit. The magnitude of the voltage gain should be 10 in the midband range, and the midband
The circuit in Figure P7.28 is a simple output stage of an audio amplifier. The transistor parameters are \(\beta=200, V_{B E}(\) on \()=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). Determine \(C_{C}\)
Reconsider the circuit in Figure P7.28. The transistor parameters are \(\beta=120, V_{B E}\) (on) \(=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). The circuit parameters are \(V^{+}=\) \(3.3 \mathrm{~V}\)
The parameters of the transistor in the circuit in Figure P7.30 are \(\beta=100\), \(V_{B E}\) (on) \(=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). The time constant associated with \(C_{C 1}\) is a
Consider the circuit shown in Figure P7.30. The time constant associated with \(C_{C 2}\) is a factor of 100 larger than the time constant associated with \(C_{C 1}\). (a) Determine \(C_{C 1}\) such
Consider the circuit shown in Figure P7.32. The transistor parameters are \(\beta=120, V_{B E}\) (on) \(=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). (a) Find \(R_{C}\) such that \(V_{C E Q}=2.2
For the transistor in the circuit in Figure P7.33, the parameters are: \(K_{n}=0.5 \mathrm{~mA} / \mathrm{V}^{2}, V_{T N}=0.8 \mathrm{~V}\), and \(\lambda=0\). (a) Design the circuit such that \(I_{D
Figure P7.34 shows the ac equivalent circuit of two identical commonsource circuits in cascade. The transistor parameters are \(K_{n 1}=K_{n 2}=\) \(0.8 \mathrm{~mA} / \mathrm{V}^{2},
The common-emitter circuit in Figure P7.35 has an emitter bypass capacitor. (a) Derive the expression for the small-signal voltage gain \(A_{v}(s)=V_{o}(s) / V_{i}(s)\). Write the expression in a
Consider the circuit in Figure P7.35. The bias voltages are \(V^{+}=3 \mathrm{~V}\) and \(V^{-}=-3 \mathrm{~V}\). The transistor parameters are \(\beta=90, V_{E B}(\mathrm{on})=0.7 \mathrm{~V}\) and
Consider the common-base circuit in Figure 7.33 in the text. The transistor parameters are \(\beta=90, V_{E B}(\mathrm{on})=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). A load capacitance of \(C_{L}=3
Consider the circuit shown in Figure 7.25(a). The bias voltages are changed to \(V^{+}=3 \mathrm{~V}\) and \(V^{-}=-3 \mathrm{~V}\). The load resistor is \(R_{L}=20 \mathrm{k} \Omega\). The
For the circuit in Figure P7.39, the transistor parameters are: \(K_{n}=\) \(0.5 \mathrm{~mA} / \mathrm{V}^{2}, V_{T N}=2 \mathrm{~V}\), and \(\lambda=0\). Determine the maximum value of \(C_{L}\)
The parameters of the transistor in the circuit in Figure P7.40 are \(\beta=100\), \(V_{B E}\) (on) \(=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). Neglect the capacitance effects of the transistor. (a)
In the common-source amplifier in Figure 7.25(a) in the text, a source bypass capacitor is to be added between the source terminal and ground potential. The circuit parameters are \(R_{S}=3.2
Consider the common-base circuit in Figure P7.42. Choose appropriate transistor parameters. (a) Using a computer analysis, generate the Bode plot of the voltage gain magnitude from a very low
For the common-emitter circuit in Figure P7.43, choose appropriate transistor parameters and perform a computer analysis. Generate the Bode plot of the voltage gain magnitude from a very low
For the multitransistor amplifier in Figure P7.44, choose appropriate transistor parameters. The lower \(3 \mathrm{~dB}\) frequency is to be less than or equal to \(20 \mathrm{~Hz}\). Assume that all
A bipolar transistor has \(f_{T}=4 \mathrm{GHz}, \beta_{o}=120\), and \(C_{\mu}=0.08 \mathrm{pF}\) when operated at \(I_{C Q}=0.25 \mathrm{~mA}\). Determine \(g_{m}, f_{\beta}\), and \(C_{\pi}\).
A high-frequency bipolar transistor is biased at \(I_{C Q}=0.4 \mathrm{~mA}\) and has parameters \(C_{\mu}=0.075 \mathrm{pF}, f_{T}=2 \mathrm{GHz}\), and \(\beta_{o}=120\). (a) Determine \(C_{\pi}\)
(a) The frequency \(f_{T}\) of a bipolar transistor is found to be \(540 \mathrm{MHz}\) when biased at \(I_{C Q}=0.2 \mathrm{~mA}\). The transistor parameters are \(C_{\mu}=0.4 \mathrm{pF}\) and
The circuit in Figure P7.48 is a hybrid- \(\pi\) equivalent circuit including the resistance \(r_{b}\). (a) Derive the expression for the voltage gain transfer function \(A_{v}(s)=V_{o}(s) /
Consider the circuit in Figure P7.49. Calculate the impedance seen by the signal source \(V_{i}\) at (a) \(f=1 \mathrm{kHz}\), (b) \(f=10 \mathrm{kHz}\), (c) \(f=100 \mathrm{kHz}\), and (d) \(f=1
A common-emitter equivalent circuit is shown in Figure P7.50. (a) What is the expression for the Miller capacitance? (b) Derive the expression for the voltage gain \(A_{v}(s)=V_{o}(s) / V_{i}(s)\) in
For the common-emitter circuit in Figure 7.41 (a) in the text, assume that \(r_{s}=\infty, R_{1} \| R_{2}=5 \mathrm{k} \Omega\), and \(R_{C}=R_{L}=1 \mathrm{k} \Omega\). The transistor is biased at
For the common-emitter circuit in Figure P7.52, assume the emitter bypass capacitor \(C_{E}\) is very large, and the transistor parameters are: \(\beta_{o}=100\), \(V_{B E}(\) on \()=0.7 \mathrm{~V},
Consider the circuit in Figure P7.52. The resistor \(R_{S}\) is changed to \(500 \Omega\) and all other resistor values are increased by a factor of 10 . The transistor parameters are the same as
The parameters of the circuit shown in Figure P7.52 are changed to \(V^{+}=5 \mathrm{~V}, R_{S}=0, R_{1}=33 \mathrm{k} \Omega, R_{2}=22 \mathrm{k} \Omega, R_{C}=5 \mathrm{k} \Omega\), and \(R_{E}=4
The parameters of an n-channel MOSFET are \(k_{n}^{\prime}=80 \mu \mathrm{A} / \mathrm{V}^{2}, W=4 \mu \mathrm{m}\), \(L=0.8 \mu \mathrm{m}, C_{g s}=50 \mathrm{fF}\), and \(C_{g d}=10 \mathrm{fF}\).
Find \(f_{T}\) for a MOSFET biased at \(I_{D Q}=120 \mu \mathrm{A}\) and \(V_{G S}-V_{T N}=0.20 \mathrm{~V}\). The transistor parameters are \(C_{g s}=40 \mathrm{fF}\) and \(C_{g d}=10 \mathrm{fF}\).

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