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computer science
systems analysis and design 12th

Questions and Answers of Systems Analysis And Design 12th

Design a bias-stable circuit in the form of Figure P5.59 with \(\beta=120\) such that \(I_{C Q}=0.8 \mathrm{~mA}, V_{C E Q}=5 \mathrm{~V}\), and the voltage across \(R_{E}\) is approximately \(0.7
Using the circuit in Figure P5.61, design a bias-stable amplifier such that the \(Q\)-point is in the center of the load line. Let \(\beta=125\). Determine \(I_{C Q}\), \(V_{C E Q}, R_{1}\), and
For the circuit shown in Figure P5.61, the bias voltages are changed to \(V^{+}=3 \mathrm{~V}\) and \(V^{-}=-3 \mathrm{~V}\).(a) Design a bias-stable circuit for \(\beta=120\) such that \(V_{C E
(a) A bias-stable circuit with the configuration shown in Figure P5.61 is to be designed such that \(I_{C Q}=(3 \pm 0.1) \mathrm{mA}\) and \(V_{C E Q} \cong 5 \mathrm{~V}\) using a transistor with
(a) For the circuit shown in Figure P5.64, assume that the transistor current gain is \(\beta=90\) and that the circuit parameter is \(R_{T H}=2.4 \mathrm{k} \Omega\). Design the circuit such that
The dc load line and \(Q\)-point of the circuit in Figure P5.65 (a) are shown in Figure P5.65(b). For the transistor, \(\beta=120\). Find \(R_{E}, R_{1}\), and \(R_{2}\) such that the circuit is bias
The range of \(\beta\) for the transistor in the circuit in Figure P5.66 is \(80 \leq \beta \leq 120\). Design a bias-stable circuit such that the nominal \(Q\)-point values are \(I_{C Q}=0.2
The nominal \(Q\)-point of the circuit in Figure P5.67 is \(I_{C Q}=1 \mathrm{~mA}\) and \(V_{C E Q}=5 \mathrm{~V}\), for \(\beta=60\). The current gain of the transistor is in the range \(45 \leq
(a) For the circuit in Figure P5.67, the value of \(V_{C C}\) is changed to \(3 \mathrm{~V}\). Let \(R_{C}=5 R_{E}\) and \(\beta=120\). Redesign a bias-stable circuit such that \(I_{C Q}=\) \(100 \mu
For the circuit in Figure P5.69, let \(\beta=100\) and \(R_{E}=3 \mathrm{k} \Omega\). Design a biasstable circuit such that \(V_{E}=0\). +2 V +5 V ww R RE R2 -2 V -5 V Figure P5.69 VE
For the circuit in Figure P5.70, let \(R_{C}=2.2 \mathrm{k} \Omega, R_{E}=2 \mathrm{k} \Omega, R_{1}=10 \mathrm{k} \Omega\), \(R_{2}=20 \mathrm{k} \Omega\), and \(\beta=60\). (a) Find \(R_{T H}\) and
Design the circuit in Figure P5.70 to be bias stable and to provide nominal \(Q\)-point values of \(I_{C Q}=0.5 \mathrm{~mA}\) and \(V_{E C Q}=8 \mathrm{~V}\). Let \(\beta=60\). The maximum current
Consider the circuit shown in Figure P5.72. (a) The nominal transistor current gain is \(\beta=80\). Design a bias-stable circuit such that \(I_{C Q}=0.15 \mathrm{~mA}\) and \(V_{E C Q}=2.7
For the circuit in Figure P5.73, let \(\beta=100\). (a) Find \(V_{T H}\) and \(R_{T H}\) for the base circuit. (b) Determine \(I_{C Q}\) and \(V_{C E Q}\). +5 V +15 V 500 +3 Vo-ww 500 50 Figure
Design a bias-stable four-resistor bias network for an npn transistor such that \(I_{C Q}=0.8 \mathrm{~mA}, V_{C E Q}=4 \mathrm{~V}\), and \(V_{E}=1.5 \mathrm{~V}\). The circuit and transistor
(a) Design a four-resistor bias network with the configuration shown in Figure P5.61 to yield \(Q\)-point values of \(I_{C Q}=50 \mu \mathrm{A}\) and \(V_{C E Q}=5 \mathrm{~V}\). The bias voltages
(a) Design a four-resistor bias network with the configuration shown in Figure P5.61 to yield \(Q\)-point values of \(I_{C Q}=0.50 \mathrm{~mA}\) and \(V_{C E Q}=2.5 \mathrm{~V}\). The bias voltages
(a) A four-resistor bias network is to be designed with the configuration shown in Figure P5.77. The \(Q\)-point values are to be \(I_{C Q}=100 \mu \mathrm{A}\) and \(V_{E C Q}=3 \mathrm{~V}\). The
(a) Design a four-resistor bias network with the configuration shown in Figure P5.77 such that the \(Q\)-point values are \(I_{C Q}=1.2 \mathrm{~mA}\) and \(V_{E C Q}=6 \mathrm{~V}\). The bias
For each transistor in the circuit in Figure P5.79, \(\beta=120\) and the B-E turnon voltage is \(0.7 \mathrm{~V}\). Determine the quiescent base, collector, and emitter currents in \(Q_{1}\) and
The parameters for each transistor in the circuit in Figure P5.80 are \(\beta=80\) and \(V_{B E}(\mathrm{on})=0.7 \mathrm{~V}\). Determine the quiescent values of base, collector, and emitter
The bias voltage in the circuit shown in Figure 5.63 is changed to \(V^{+}=5 \mathrm{~V}\). Design the circuit to meet the following specifications: \(V_{C E 1}=V_{C E 2}=1.2 \mathrm{~V}, \quad V_{R
Consider the circuit shown in Figure P5.82. The current gain for the npn transistor is \(\beta_{n}=120\) and for the pnp transistor is \(\beta_{p}=80\). Determine \(I_{B 1}\), \(I_{C 1}, I_{B 2},
(a) For the transistors in the circuit shown in Figure P5.83, the parameters are: \(\beta=100\) and \(V_{B E}\) (on) \(=V_{E B}(\mathrm{on})=0.7 \mathrm{~V}\). Determine \(R_{C 1}, R_{E 1}, R_{C
Using a computer simulation, plot \(V_{C E}\) versus \(V_{1}\) over the range \(0 \leq V_{I} \leq 8 \mathrm{~V}\) for the circuit in Figure 5.24(a). At what voltage does the transistor turn on and at
Using a computer simulation, verify the results of Example 5.7.Data From Example 5.7:-Figure 5.30(a):- Calculate the characteristics of a circuit containing an emitter resistor. For the circuit shown
Consider the circuit and parameters in Example 5.15. Using a computer simulation, determine the change in \(Q\)-point values if all resistors vary by \(\pm 5\) percent.Data From Example 5.15:-Figure
Using a computer simulation, verify the results of Example 5.19.Data From Example 5.19:-Figure 5.61:- Calculate the dc voltages at each node and the dc currents through the elements in a multistage
Consider a common-emitter circuit with the configuration shown in Figure 5.54(a). Assume a bias voltage of \(V_{C C}=3.3 \mathrm{~V}\) and assume the transistor current gain is in the range \(100
The emitter-follower circuit shown in Figure P5.89 is biased at \(V^{+}=2.5 \mathrm{~V}\) and \(V^{-}=-2.5 \mathrm{~V}\). Design a bias-stable circuit such that the nominal \(Q\)-point values are
The bias voltages for the circuit in Figure 5.57 (a) are \(V^{+}=3.3 \mathrm{~V}\) and \(V^{-}=-3.3 \mathrm{~V}\). The transistor current gain is \(\beta=100\). Design a bias-stable circuit such that
The multitransistor circuit in Figure 5.61 is to be redesigned. The bias voltages are to be \(\pm 3.3\mathrm{~V}\) and the nominal transistor current gains are \(\beta=120\). Design a bias-stable
Discuss, using the concept of a load line, how a simple common-emitter circuit can amplify a time-varying signal.
Why can the analysis of a transistor circuit be split into a dc analysis, with all ac sources set equal to zero, and an ac analysis, with all dc sources set equal to zero?
What does the term small-signal imply?
Sketch the hybrid- \(\pi\) equivalent circuit of an npn and a pnp bipolar transistor.
State the relationships of the small-signal hybrid- \(\pi\) parameters \(g_{m}, r_{\pi}\), and \(r_{o}\) to the transistor dc quiescent values.
What are the physical meanings of the hybrid \(-\pi\) parameters \(r_{\pi}\) and \(r_{o}\) ?
Sketch a simple common-emitter amplifier circuit and discuss the general ac circuit characteristics (voltage gain, current gain, input and output resistances).
What are the changes in the dc and ac characteristics of a common-emitter amplifier when an emitter resistor and an emitter bypass capacitor are incorporated in the design?
Discuss the concepts of a dc load line and an ac load line.
Sketch a simple emitter-follower amplifier circuit and discuss the general ac circuit characteristics (voltage gain, current gain, input and output resistances).
Sketch a simple common-base amplifier circuit and discuss the general ac circuit characteristics (voltage gain, current gain, input and output resistances).
Compare the ac circuit characteristics of the common-emitter, emitter-follower, and common-base circuits.
Discuss the general conditions under which a common-emitter amplifier, an emitter-follower amplifier, and a common-base amplifier would be used in an electronic circuit design.
State at least two reasons why a multistage amplifier circuit would be required in a design rather than a single-stage circuit.
The parameters of the transistors in the circuit in Figure P4.56 are \(V_{T N D}=\) \(-1 \mathrm{~V}, K_{n D}=0.5 \mathrm{~mA} / \mathrm{V}^{2}\) for transistor \(M_{D}\), and \(V_{T N L}=+1
(a) Determine the built-in potential barrier \(V_{b i}\) in a silicon pn junction for (i) \(N_{d}=N_{a}=5 \times 10^{15} \mathrm{~cm}^{-3}\); (ii) \(N_{d}=5 \times 10^{17} \mathrm{~cm}^{-3}\) and
(a) The reverse-saturation current of a pn junction diode is \(I_{S}=10^{-11} \mathrm{~A}\). Determine the diode current for diode voltages of \(0.3,0.5,0.7,-0.02,-0.2\), and \(-2 \mathrm{~V}\).(b)
A silicon pn junction diode has an emission coefficient of \(n=1\). The diode current is \(I_{D}=1 \mathrm{~mA}\) when \(V_{D}=0.7 \mathrm{~V}\). (a) What is the reverse-bias saturation current? (b)
(a) Consider a silicon pn junction diode operating in the forward-bias region. Determine the increase in forward-bias voltage that will cause a factor of 10 increase in current.(b) Repeat part (a)
The reverse-bias saturation current for a set of diodes varies between \(5 \times 10^{-14} \leq I_{S} \leq 5 \times 10^{-12} \mathrm{~A}\). The diodes are all to be biased at \(I_{D}=2
(a) The reverse-saturation current of a gallium arsenide pn junction diode is \(I_{S}=10^{-22} \mathrm{~A}\). Determine the diode current for diode voltages of \(0.8,1.0\), \(1.2,-0.02,-0.2\), and
A silicon pn junction diode has an applied forward-bias voltage of \(0.6 \mathrm{~V}\). Determine the ratio of current at \(100{ }^{\circ} \mathrm{C}\) to that at \(-55^{\circ} \mathrm{C}\).
Consider the diode circuit shown in Figure P1.39. The diode reversesaturation current is \(I_{S}=10^{-12} \mathrm{~A}\). Determine the diode current \(I_{D}\) and diode voltage \(V_{D}\).Figure
(a) For the circuit shown in Figure P1.41(a), determine \(I_{D 1}, I_{D 2}, V_{D 1}\), and \(V_{D 2}\) for (i) \(I_{S 1}=I_{S 2}=10^{-13} \mathrm{~A}\) and (ii) \(I_{S 1}=5 \times 10^{-14}
(a) Consider the circuit shown in Figure P1.40. The value of \(R_{1}\) is reduced to \(R_{1}=10 \mathrm{k} \Omega\) and the cut-in voltage of the diode is \(V_{\gamma}=0.7 \mathrm{~V}\). Determine
The diode cut-in voltage is \(V_{\gamma}=0.7 \mathrm{~V}\) for the circuits shown in Figure P1.45. Plot \(V_{O}\) and \(I_{D}\) versus \(I_{I}\) over the range \(0 \leq I_{I} \leq 2 \mathrm{~mA}\)
Find \(I\) and \(V_{O}\) in each circuit shown in Figure P1.47 if (i) \(V_{\gamma}=0.7 \mathrm{~V}\) and (ii) \(V_{\gamma}=0.6 \mathrm{~V}\). +5 V +5 V +2 V +5 V 5 20 20 Vo (a) Figure P1.47 -5 V
(a) In the circuit shown in Figure P1.49, find the diode voltage \(V_{D}\) and the supply voltage \(V\) such that the current is \(I_{D}=0.4 \mathrm{~mA}\). Assume the diode cut-in voltage is
(a) Consider a pn junction diode biased at \(I_{D Q}=1 \mathrm{~mA}\). A sinusoidal voltage is superimposed on \(V_{D Q}\) such that the peak-to-peak sinusoidal current is \(0.05 I_{D Q}\). Find the
The diode in the circuit shown in Figure P1.53 is biased with a constant current source \(I\). A sinusoidal signal \(v_{s}\) is coupled through \(R_{S}\) and \(C\). Assume that \(C\) is large so that
A pn junction diode and a Schottky diode have equal cross-sectional areas and have forward-bias currents of \(0.5 \mathrm{~mA}\). The reverse-saturation current of the Schottky diode is \(I_{S}=5
Consider the Zener diode circuit shown in Figure P1.57. The Zener breakdown voltage is \(V_{Z}=5.6 \mathrm{~V}\) at \(I_{Z}=0.1 \mathrm{~mA}\), and the incremental Zener resistance is \(r_{z}=10
Consider the Zener diode circuit shown in Figure P1.57. The Zener diode voltage is \(V_{Z}=6.8 \mathrm{~V}\) at \(I_{Z}=0.1 \mathrm{~mA}\) and the incremental Zener resistance is \(r_{z}=20 \Omega\).
The parameters of the half-wave rectifier circuit in Figure 2.8 (a) in the text are \(R=1 \mathrm{k} \Omega, C=350 \mu \mathrm{F}\), and \(V_{\gamma}=0.7 \mathrm{~V}\). Assume \(v_{S}(t)=\) \(V_{S}
Sketch \(v_{o}\) versus time for the circuit in Figure P2.17 with the input shown. Assume \(V_{\gamma}=0\) Vi A +40 D R = 2.2 -40- Figure P2.17 www R = 2.2 ww R = 2.2
Consider the circuit shown in Figure P2.19. The Zener diode voltage is \(V_{Z}=3.9 \mathrm{~V}\) and the Zener diode incremental resistance is \(r_{z}=0\).(a) Determine \(I_{Z}, I_{L}\), and the
Consider the Zener diode circuit shown in Figure P2.21. Let \(V_{I}=60 \mathrm{~V}\), \(R_{i}=150 \Omega\), and \(V_{Z O}=15.4 \mathrm{~V}\). Assume \(r_{z}=0\). The power rating of the diode is \(4
A Zener diode is connected in a voltage regulator circuit as shown in Figure P2.21. The Zener voltage is \(V_{Z}=10 \mathrm{~V}\) and the Zener resistance is assumed to be \(r_{z}=0\). (a) Determine
A voltage regulator is to have a nominal output voltage of \(10 \mathrm{~V}\). The specified Zener diode has a rating of \(1 \mathrm{~W}\), has a \(10 \mathrm{~V}\) drop at \(I_{Z}=25 \mathrm{~mA}\),
The secondary voltage in the circuit in Figure P2.28 is \(v_{s}=12 \sin \omega t \mathrm{~V}\). The Zener diode has parameters \(V_{Z}=8 \mathrm{~V}\) at \(I_{Z}=100 \mathrm{~mA}\) and \(r_{z}=0.5
Consider the circuit in Figure P2.31. Let \(V_{\gamma}=0\). (a) Plot \(v_{O}\) versus \(v_{I}\) over the range \(-10 \leq v_{I} \leq+10 \mathrm{~V}\). (b) Plot \(i_{1}\) over the same input voltage
Each diode cut-in voltage is \(0.7 \mathrm{~V}\) for the circuits shown in Figure P2.33.(a) Plot \(v_{O}\) versus \(v_{I}\) over the range \(-5 \leq v_{I} \leq+5 \mathrm{~V}\) for the circuit in
Consider the circuits shown in Figure P2.35. Each diode cut-in voltage is \(V_{\gamma}=0.7 \mathrm{~V}\).(a) Plot \(v_{O}\) versus \(v_{I}\) over the range \(-10 \leq v_{I} \leq+10 \mathrm{~V}\) for
Consider the parallel clipper circuit in Figure 2.26 in the text. Assume \(V_{Z 1}=6 \mathrm{~V}, V_{Z 2}=4 \mathrm{~V}\), and \(V_{\gamma}=0.7 \mathrm{~V}\) for all diodes. For \(v_{I}=10 \sin
Sketch the steady-state output voltage \(v_{O}\) versus time for each circuit in Figure P2.39 with the input voltage given in Figure P2.39(a). Assume \(V_{\gamma}=0\) and assume the \(R C\) time
Design a diode clamper to generate a steady-state output voltage \(v_{0}\) from the input voltage \(v_{I}\) shown in Figure P2.40 if (a) \(V_{\gamma}=0\) and (b) \(V_{\gamma}=0.7 \mathrm{~V}\). VI
Design a diode clamper to generate a steady-state output voltage \(v_{O}\) from the input voltage \(v_{I}\) in Figure P2.41 if \(V_{\gamma}=0\). +20 V +30 V 0 -20 V Figure P2.41 (a) 0 -10 V (b)
Repeat Problem 2.42 for the circuit in Figure P2.39 (c) for (i) \(V_{B}=5 \mathrm{~V}\) and (ii) \(V_{B}=-5 \mathrm{~V}\).For the circuit in Figure P2.39(b), let \(V_{\gamma}=0\) and \(v_{I}=10 \sin
In the circuit in Figure P2.45 the diodes have the same piecewise linear parameters as described in Problem 2.44. Calculate the output voltage \(V_{O}\) and the currents \(I_{D 1}, I_{D 2}\), and
Consider the circuit shown in Figure P2.47. Assume each diode cut-in voltage is \(V_{\gamma}=0.6 \mathrm{~V}\).(a) Determine \(R_{1}, R_{2}\), and \(R_{3}\) such that \(I_{D 1}=0.2 \mathrm{~mA}\),
Consider the circuit in Figure P2.49. Each diode cut-in voltage is \(V_{\gamma}=0.7 \mathrm{~V}\).(a) For \(R_{2}=1.1 \mathrm{k} \Omega\), determine \(I_{D 1}, I_{D 2}\), and \(V_{A}\).(b) Repeat
Assume \(V_{\gamma}=0.7 \mathrm{~V}\) for each diode in the circuit in Figure P2.51. Plot \(v_{O}\) versus \(v_{I}\) for \(-10 \leq v_{I} \leq+10 \mathrm{~V}\). +10 V 10 Figure P2.51 www 10 -10 V
Assume each diode cut-in voltage is \(V_{\gamma}=0.7 \mathrm{~V}\) for the circuit in Figure P2.55. Determine \(I_{D 1}\) and \(V_{O}\) for (a) \(R_{1}=10 \mathrm{k} \Omega, R_{2}=5 \mathrm{k}
Each diode cut-in voltage in the circuit in Figure P2.59 is 0.7V. Determine \(I_{D 1}, I_{D 2}, I_{D 3}\), and \(v_{O}\) for (a) \(v_{I}=0.5 \mathrm{~V}\), (b) \(v_{I}=1.5 \mathrm{~V}\), (c)
Consider the circuit in Figure P2.61. The output of a diode OR logic gate is connected to the input of a second diode OR logic gate. Assume \(V_{\gamma}=0.6 \mathrm{~V}\) for each diode. Determine
Determine the Boolean expression for \(V_{O}\) in terms of the four input voltages for the circuit in Figure P2.63. +5V Vo K V20KH 10 kQ +5V Vo K V40 KH Figure P2.63 10 kS2 www Vo 10 KS2
The light-emitting diode in the circuit shown in Figure P2.64 has parameters \(V_{\gamma}=1.7 \mathrm{~V}\) and \(r_{f}=0\). Light will first be detected when the current is \(I=8 \mathrm{~mA}\). If
(a) Calculate the drain current in an NMOS transistor with parameters \(V_{T N}=0.4 \mathrm{~V}, k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}, W=10 \mu \mathrm{m}, L=0.8 \mu \mathrm{m}\), and
The transistor characteristics \(i_{D}\) versus \(v_{D S}\) for an NMOS device are shown in Figure P3.3. (a) Is this an enhancement-mode or depletion-mode device? (b) Determine the values for
The threshold voltage of each transistor in Figure P3.5 is \(V_{T N}=0.4\) V. Determine the region of operation of the transistor in each circuit. 2.2 V 2.2 V Figure P3.5 (a) IV 0.6V 3V (b) (c)
Discuss, using the concept of a load line, how a simple common-source circuit can amplify a time-varying signal.
How does the transistor width-to-length ratio affect the small-signal voltage gain of a common-source amplifier?
Discuss the physical meaning of the small-signal circuit parameter \(r_{o}\).
How does the body effect change the small-signal equivalent circuit of the MOSFET?
Sketch a simple common-source amplifier circuit and discuss the general ac circuit characteristics (voltage gain and output resistance).
Discuss the general conditions under which a common-source amplifier would be used.
Why, in general, is the magnitude of the voltage gain of a common-source amplifier relatively small?
What are the changes in dc and ac characteristics of a common-source amplifier when a source resistor and a source bypass capacitor are incorporated in the design?

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